(China (Mainland))
Product Summary
The AP9971GM is an N-channel enhancement mode power MOSFET. Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Parametrics
AP9971GM absolute maximum ratings: (1)VDS, Drain-Source Voltage: 60V; (2)VGS, Gate-Source Voltage: ±25V; (3)ID@TA=25℃, Continuous Drain Current, VGS @ 10V: 5 A; (4)ID@TA=100℃, Continuous Drain Current, VGS @ 10V: 3.2A; (5)IDM, Pulsed Drain Current: 30A; (6)PD@TA=25℃, Total Power Dissipation: 2 W; (7)Linear Derating Factor: 0.016W/℃; (8)TSTG, Linear Derating Factor: -55 to 150 ℃; (9)TJ, Operating Junction Temperature Range: -55 to 150℃.
Features
AP9971GM features: (1)Low On-resistance; (2)Single Drive Requirement; (3)Surface Mount Package.
Diagrams
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Cables (Cable Assemblies) BATTERY MGMT cbl 25' |
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Cables (Cable Assemblies) BATTERY MGMT cbl 50" |
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AP9927 |
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Cables (Cable Assemblies) BATT MGMT cbl 100' 100" |
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