(China (Mainland))
Product Summary
The 2SC5707 is a PNP / NPN epitaxial planar silicon transistor. The applications of the are: DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Parametrics
2SC5707 absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: (-50)80 V; (2)Collector-to-Emitter Voltage VCES: (-50)80 V; (3)Collector-to-Emitter Voltage VCEO: (-)50 V; (4)Emitter-to-Base Voltage VEBO: (-)6 V; (5)Collector Current IC: (-)8 A; (6)Collector Current (Pulse) ICP: (-)11 A; (7)Base Current IB: (-)2 A; (8)Collector Dissipation PC: 1.0 W; Tc=25℃: 15 W; (9)Junction Temperature Tj: 150℃; (10)Storage Temperature Tstg: -55 to +150℃.
Features
2SC5707 features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SC5707 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2SC5707-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 8A 50V |
Data Sheet |
|
|
||||||||||||
 |
2SC5707-TL-E |
|
TRANS NPN BIPO 8A 50V TP-FA |
Data Sheet |
|
|
||||||||||||
