(China (Mainland))
Product Summary
The N28F512-120 is a 512K CMOS flash memory. The N28F512-120 offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The device adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after-sale. The 28F512 increases memory flexibility, while contributing to time- and cost-savings.
Parametrics
N28F512-120 absolute maximum ratings: (1)Operating Temperature, During Read: 0℃ to +70℃; (2)During Erase/Program: 0℃ to +70℃; (3)Operating Temperature, During Read: -40℃ to +85℃; (4)During Erase/Program: -40℃ to + 85℃; (5)Temperature Under Bias: -10℃ to +80℃; (6)Temperature Under Bias: -50℃ to + 95℃; (7)Storage Temperature: 65℃ to +125℃; (8)Voltage on Any Pin with Respect to Ground: -2.0V to + 7.0V; (9)Vpp Supply Voltage with Respect to Ground During Erase/Program: -2.0V to + 14.0V; (10)Vcc Supply Voltage with Respect to Ground: -2.0V to + 7.0V; (11)Output Short Circuit Current: 100 mA; (12)Voltage on Pin Ag with Respect to Ground: -2.0V to +13.5V.
Features
N28F512-120 features: (1)Flash electrical chip-erase, 1 Second Typical Chip-Erase; (2)Quick-Pulse Programming Algorithm; (3)100,000 Erase/Program Cycles; (4)12.0V ±5% VPP; (5)High-Performance Read, 120 ns Maximum Access Time; (6)CMOS Low Power Consumption, 10 mA Typical Active Current; 50μA Typical Standby Current; 0W Data Retention Power; (7)Integrated Program/Erase Stop Timers; (8)Noise Immunity Features, ±10% Vcc Tolerance; Maximum Latch-Up Immunity through EPI Processing; (9)ETOX II Nonvolatile Flash Technology, EPROM-Compatible Process Base; High-Volume Manufacturing Experience; (10)JEDEC-Standard Pinouts; (11)Extended Temperature Options.
Diagrams
