(China (Mainland))
Product Summary
The TPV8100B is a NPN silicon RF power transistor. It is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.
Parametrics
TPV8100B absolute maximum ratings: (1)Collector–Emitter Voltage VCER: 40 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4 Vdc; (4)Collector–Current — Continuous IC: 12 Adc; (5)Total Device Dissipation @ 25℃ Case PD: 215 Watts; Derate above 25℃ PD: 1.25 W/℃; (6)Operating Junction Temperature TJ: 200 ℃; (7)Storage Temperature Range Tstg: -65 to +150 ℃.
Features
TPV8100B features: (1)To be used class AB for TV band IV and V; (2)Specified 28 Volts, 860 MHz Characteristics: Output Power = 125 Watts (peak sync.); Output Power = 100 Watts (CW); Minimum Gain = 8.5 dB; (3)Specified 32 Volts, 860 MHz Characteristics: Output Power = 150 Watts (peak sync.); (4)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
Diagrams
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 TPV8100B |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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TPV8100 |
Other |
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Data Sheet |
Negotiable |
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TPV8100B |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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TPV8200B |
Other |
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Data Sheet |
Negotiable |
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