Product Summary
The MRF426 is an NPN silicon RF power transistor. It is designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
Parametrics
MRF426 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current Continuous IC: 3.0 Adc; (5)Withstand Current 5 s: 6.0 Adc; (6)Total Device Dissipation @ TC = 25℃ PD: 70Watts; Derate above 25℃: 0.4W/℃; (7)Storage Temperature Range Tstg: -65 to +150 ℃.
Features
MRF426 features: (1)Specified 28 Volt, 30 MHz Characteristics, Output Power = 25 W (PEP), Minimum Gain = 22 dB, Efficiency = 35%; (2)Intermodulation Distortion @ 25 W (PEP), IMD = -30 dB (Max); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Class A and AB Characterization; (5)BLX 13 Equivalent.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MRF426 |
M/A-COM Technology Solutions |
Transistors RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB |
Data Sheet |
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