(China (Mainland))
Product Summary
The FLM8596-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
Parametrics
FLM8596-8F absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 42.8W; (4)Storage Temperature, TSTG: -65 to +175℃; (5)Channel Temperature, TCH: 175℃.
Features
FLM8596-8F features: (1)High Output Power: P1dB = 39.0dBm (Typ.); (2)High Gain: G1dB = 7.5dB (Typ.); (3)High PAE: G1dd = 29% (Typ.); (4)Low IM3 = -45dBc@Po = 29.5dBm; (5)Broad Band: 8.5 to 9.6GHz; (6)Impedance Matched Zin/Zout = 50?
Hermetically Sealed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FLM8596-8F |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FLM8596-12F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FLM8596-15F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FLM8596-4F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FLM8596-8F |
Other |
|
Data Sheet |
Negotiable |
|
||||
