(China (Mainland))
Product Summary
The D1029UK is a gold metallised multi-purpose silicon dmos RF FET. It is used in VHF/UHF communications from 1 MHz to 200 MHz.
Parametrics
D1029UK absolute maximum ratings: (1)PD Power Dissipation: 438W; (2)BVDSS Drain - Source Breakdown Voltage: 70V; (3)BVGSS Gate - Source Breakdown Voltage: ±20V; (4)ID(sat) Drain Current: 35A; (5)Tstg Storage Temperature: -65 to 150℃; (6)Tj Maximum Operating Junction Temperature: 200℃.
Features
D1029UK features: (1)simplified amplifier design; (2)suitable for broad band applications; (3)low crss; (4)simple bias circuits; (5)low noise; (6)high gain -13 db minimum.
Diagrams
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 D1029UK |
Other |
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Data Sheet |
Negotiable |
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