(China (Mainland))
Product Summary
The A04822 is a Dual N-Channel Enhancement Mode Field Effect Transistor. The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The AO4822 is Pb-free (meets ROHS & Sony 259 specifications). The AO4822 is electrically identical.
Parametrics
A04822 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, TA=25℃, ID: 8.5A; TA=70℃: 6.6A; (4)Pulsed Drain Current, IDM: 30A; (5)Power Dissipation, TA=25℃, PD: 2W; TA=70℃, PD: 1.28W; (6)Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃.
Features
A04822 features: (1)VDS (V) = 30V; (2)ID = 8.5A (VGS = 10V); (3)RDS(ON) < 16mΩ (VGS = 10V); (4)RDS(ON) < 26mΩ (VGS = 4.5V).
Diagrams
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 AO4822 |
Other |
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Data Sheet |
Negotiable |
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AO4822A |
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MOSFET 2N-CH 30V 6.8A 8SOIC |
Data Sheet |
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