(China (Mainland))
Product Summary
The AP9930M is a 2N and 2P-channel enhancement MOSFET. The Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Parametrics
AP9930M absolute maximum ratigns: (1)VDS, Drain-Source Voltage: -30 V; (2)VGS, Gate-Source Voltage: ±25 V; (3)ID, @TA=25℃ Continuous Drain Current: -5.1 A; (4)ID, @TA=70℃ Continuous Drain Current: -3.4 A; (5)IDM, Pulsed Drain Current:-20 A; (6)PD, @TA=25℃ Total Power Dissipation: 2.0 W; (7)Linear Derating Factor: 0.016 W/℃; (8)TSTG, Storage Temperature Range: -55 to 150℃; (9)TJ, Operating Junction Temperature Range: -55 to 150℃.
Features
AP9930M features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Full Bridge Application on LCD Monitor Inverter.
Diagrams
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