(China (Mainland))
Product Summary
The AP4501GSD is an N and P-channel enhancement mode power MOSFET. The Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
Parametrics
AP4501GSD absolute maximum ratings: (1)VDS, Drain-Source Voltage: -30 V; (2)VGS, Gate-Source Voltage: ±20 V; (3)ID@TA=25℃, Continuous Drain Current: -5 A; (4)ID@TA=70℃, Continuous Drain Current: -4.2 A; (5)IDM, Pulsed Drain Current: -30 A; (6)PD@TA=25℃, Total Power Dissipation: 2 W; (7)Linear Derating Factor: 0.016 W/℃; (8)TSTG, Storage Temperature Range: -55 to +150℃; (9)TJ, Operating Junction Temperature Range: -55 to +150℃.
Features
AP4501GSD features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Fast Switching Characteristic.
Diagrams
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AP4505LX-J90-4P-TA |
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AP4505LX-J96 |
ADDA |
CPU / Chip Coolers 45X8 LOW TACH 5V |
Data Sheet |
Negotiable |
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AP4512LX-J90 |
ADDA |
CPU / Chip Coolers 45X8 LOW HYPRO 12V |
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Negotiable |
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AP4512LX-J96 |
ADDA |
CPU / Chip Coolers 45X8 LOW TACH 12V |
Data Sheet |
Negotiable |
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