(China (Mainland))
Product Summary
The AP4501GSD is an N and P-channel enhancement mode power MOSFET. The Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
Parametrics
AP4501GSD absolute maximum ratings: (1)VDS, Drain-Source Voltage: -30 V; (2)VGS, Gate-Source Voltage: ±20 V; (3)ID@TA=25℃, Continuous Drain Current: -5 A; (4)ID@TA=70℃, Continuous Drain Current: -4.2 A; (5)IDM, Pulsed Drain Current: -30 A; (6)PD@TA=25℃, Total Power Dissipation: 2 W; (7)Linear Derating Factor: 0.016 W/℃; (8)TSTG, Storage Temperature Range: -55 to +150℃; (9)TJ, Operating Junction Temperature Range: -55 to +150℃.
Features
AP4501GSD features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Fast Switching Characteristic.
Diagrams
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 AP4578GM |
Other |
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Data Sheet |
Negotiable |
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AP4578GH |
Other |
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Data Sheet |
Negotiable |
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AP4578GD |
Other |
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Data Sheet |
Negotiable |
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AP4512MX-G96 |
ADDA |
CPU / Chip Coolers 45MM 12VDC 5.2CFM 3RD WIRE SPEED SENSR |
Data Sheet |
Negotiable |
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AP4512MX-J96-4P-TA |
ADDA |
CPU / Chip Coolers 45mm 12VDC 5.2CFM |
Data Sheet |
Negotiable |
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AP4512MX-J90-4P-TA |
ADDA |
CPU / Chip Coolers 45mm 12VDC 5.2CFM |
Data Sheet |
Negotiable |
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